电工技术学报2017，Vol.32Issue(13)：14-22,9.DOI:10.19595/j.cnki.1000-6753.tces.170594
IGBT电力电子系统小时间尺度动态性能分析与计算的电磁场-电路耦合模型
A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device
摘要
Abstract
To consider the effect of the displacement current and the skin effect of the electromagnetic phenomenon as well the stray parameters in a small time scale electromagnetic transient, which are not properly muddled in the existing model, a coupled 3D finite element-circuit model of an IGBT based power electronics device for its transient performance computation in small and extreme small time scales is developed and an iterative solution methodology is proposed. In order to describe the skin effect and displacement current, a three-dimensional (3D) finite element model of IGBT is developed; In order to model the influence of stray parameters, a high-order distributed circuit model of the whole power electronics system is proposed, and the numerical method for stray parameters computation is included. From the analysis of the internal electromagnetic transient process of an IGBT, an improved IGBT circuit model is proposed. In order to balance the accuracy and the computational cost of the high order circuit model of a complete power electronics system, a reduction method is proposed. The comparisons between the simulated and tested results evidence the feasibilities and merits of the proposed work.关键词
绝缘栅双极型晶体管/杂散参数/有限元方法/降阶技术/位移电流Key words
Insulated gate bipolar transistor (IGBT)/stray parameters/finite element model/order-reduction/displacement current分类
信息技术与安全科学引用本文复制引用
马瑜涵,陈佳佳,胡斯登,杨仕友..IGBT电力电子系统小时间尺度动态性能分析与计算的电磁场-电路耦合模型[J].电工技术学报,2017,32(13):14-22,9.基金项目
国家自然科学基金资助项目(51490682). （51490682）
