电工技术学报2017，Vol.32Issue(13)：23-30,8.DOI:10.19595/j.cnki.1000-6753.tces.170389
驱动回路参数对碳化硅MOSFET开关瞬态过程的影响
Impact of Gate-Loop Parameters on the Switching Behavior of SiC MOSFETs
摘要
Abstract
The switching behavior of Silicon Carbide (SiC) MOSFETs is susceptible to the parasitic elements in the system. It manifests non-ideal characteristics of the power pulses, and further limits the system reliability and efficiency. The relationship among the control pulse, the drive pulse and the power pulse is analyzed. Two parameters dv/dt and di/dt are extracted as two critical factors affecting the switching behavior of SiC MOSFETs. The impacts of the gate-loop parameters on dv/dt and di/dt are analyzed theoretically and verified through PSpice simulation and experiments. Furthermore, several transient control methods based on the gate-loop parameters are compared, as a guideline for the control of the switching behavior of SiC MOSFETs in real applications.关键词
碳化硅MOSFET/脉冲/杂散参数/开关特性Key words
SiC MOSFET/pulse/parasitic parameters/switching behavior分类
信息技术与安全科学引用本文复制引用
王旭东,朱义诚,赵争鸣,陈凯楠..驱动回路参数对碳化硅MOSFET开关瞬态过程的影响[J].电工技术学报,2017,32(13):23-30,8.基金项目
国家自然科学基金重大项目资助(51490680,51490683). （51490680,51490683）
