电工技术学报2017，Vol.32Issue(14)：87-95,9.DOI:10.19595/j.cnki.1000-6753.tces.L70526
高速SiC MOSFET开关特性的测试方法
Test Method for Switching Performance of High Speed SiC MOSFET
梁美 1李艳 1郑琼林 1赵红雁1
作者信息
- 1. 北京交通大学电气工程学院 北京 100044
- 折叠
摘要
Abstract
In order to precisely test the switching performance of high speed SiC MOSFET, this paper will focus on the precise test method in the double pulse test platform. The effects of the parasitic inductors on the switching performance are illustrated by simulation, and the PCB layout is optimized to reduce the parasitic inductors. The tested results of two PCB layouts are compared. The effects of the parasitic capacitors in the flywheel diode and the load inductor on the turn-on switching performance are presented. The tested results by different passive voltage probes, different grounding connecting ways and different current test equipment are compared. The impacts of the phase delay on the turn-on and turn-off switching loss are presented. At last, the proper test points are shown clearly in this paper.关键词
测试方法/开关特性/高速SiCMOSFET/寄生参数Key words
Test method/switching performance/high speed SiC MOSFET/parasitic parameters分类
信息技术与安全科学引用本文复制引用
梁美,李艳,郑琼林,赵红雁..高速SiC MOSFET开关特性的测试方法[J].电工技术学报,2017,32(14):87-95,9.
