量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响
Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED
摘要
Abstract
V-pits-containing InGaN/GaN blue LEDs were grown on patterned Si substrate by metal-organic chemical vapor deposition ( MOCVD) . A carrier confinement quantum well( QW) with a lar-ger band gap and a light-emitting QW with a slightly smaller band gap were grown by tuning growth temperature. The effect of QW structure on the efficiency droop performance of V-pits-containing In-GaN/GaN blue LED was investigated with some means to mix the two different types of QW. LED epitaxial wafers and LED photoelectric properties were characterized by high-resolution X-ray diffrac-tion and LED test system. For the novel quantum well structure in which the confinement QW close to the n-side and the light-emitting QW close to the p-side, the droop of the external quantum effi-ciency is only 12 . 7%, which shows a more significant improvement compared with other QW struc-tures (16. 3%, 16. 0%, 28. 4%). What's more, only for this kind of structure, the internal quan-tum efficiency does not decrease sharply with the increasing of drive current at low temperature( T≤150 K) . The results show that a reasonable design of QW structure can significantly improve the ef-fective overlap of electron-hole pairs in V-pits-containing InGaN/GaN QWs, promote carriers inter-action between wells, and then improve carriers matching degree, inhibit electron leakage, retard efficiency droop, and finally enhance the photoelectric properties of devices.关键词
硅衬底/InGaN/GaN蓝光LED/效率衰减/V形坑/量子阱结构Key words
Si substrate/InGaN/GaN blue LED/efficiency droop/V-shaped pits/quantum well structure分类
数理科学引用本文复制引用
吕全江,莫春兰,张建立,吴小明,刘军林,江风益..量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J].发光学报,2017,38(7):923-929,7.基金项目
国家重点研发计划重点专项(2016YFB0400600,2016YFB0400601) （2016YFB0400600,2016YFB0400601）
国家自然科学基金重点项目(61334001) （61334001）
国家自然科学青年基金(21405076) （21405076）
国家自然科学地区基金(11364034) （11364034）
江西省自然科学基金(20151BAB207053) （20151BAB207053）
江西省自然科学基金(20161BAB201011)资助项目 Supported by State Key Program of Research and Development of China (2016YFB0400600, 2016YFB0400601) （20161BAB201011）
State Key Pro-gram of National Natural Science of China (61334001) （61334001）
National Science Foundation for Young Scientists of China (21405076) （21405076）
Fund for Less Developed Regions of National Natural Science Foundation of China ( 11364034 ) （ 11364034 ）
Natural Science Foundation of Jiangxi Province (20151BAB207053) （20151BAB207053）
Natural Science Foundation of Jiangxi Province (20161BAB201011) （20161BAB201011）
