硅酸盐学报2017，Vol.45Issue(7)：961-967,7.DOI:10.14062/j.issn.0454-5648.2017.07.11
In掺杂Bi2Se3晶体的电学性能与形貌
Electrical Transport Properties and Morphology of In-doped Bi2Se3 Crystals
摘要
Abstract
Indium-doped Bi2Se3 crystals were fabricated by a self-flux method. The effect of In doping amount on the crystal structure, micro morphology, electrical and magnetic transport properties was investigated. The results show that the In atoms incorporate into tetrad mite structure due to occupying Bi lattice sites. The lattice constant,c, of the sample decreases, the lamellar structure becomes more obvious and the number of stacks increases with the increase of In doping amount. All the samples show a weakly metallic resistivity, and the resistivity increases monotonously as In doping amount increases due to the ccontribution of doping ionized impurity scattering. In addition, the positive correlation between magneto resistance (RM) and In content was analyzed. The behaviour ofRM is related to the phonon scattering effect, which enhances theRM value.关键词
硒化铋单晶/掺杂/结构形貌/电输运性能Key words
bismuth selenide single crystal/doping/morphology/electrical transport property分类
通用工业技术引用本文复制引用
魏占涛,杨辉,张敏..In掺杂Bi2Se3晶体的电学性能与形貌[J].硅酸盐学报,2017,45(7):961-967,7.基金项目
四川省科技厅应用基础研究项目(2014JY0133) （2014JY0133）
西华师范大学博士科研启动基金项目(412577) （412577）
国家青年科学基金项目(51271155,51002125,51377138). （51271155,51002125,51377138）
