金刚石与磨料磨具工程2017，Vol.37Issue(3)：88-90,3.DOI:10.13394/j.cnki.jgszz.2017.3.0017
蓝宝石晶片粗磨工艺的研究
Coarse grinding parameters on sapphire wafer
董云娜1
作者信息
- 1. 天津西美半导体材料有限公司, 天津 300382
- 折叠
摘要
Abstract
Coarse grinding sapphire wafer surface technology is researched by using 61 μm boron carbide, Single factor experiment is used to discuss and test the influence of slurry, lapping pressure and boron carbide content.Results show that the best effect appears when mass fraction of boron carbide is 20% with CM-F series slurry, flow rate 250 mL/min, lapping at 80 r/min for 30 min, grinding pressure 2.8×104 Pa, the material removal rate can reach 2.47 μm/min, with no visible scratches on the surface.The surface quality improved obviously using the OLYMPUS-MX50 observation.关键词
悬浮液/碳化硼/蓝宝石晶片/材料去除率Key words
suspension/boron carbide/sapphire wafer/material removal rate分类
矿业与冶金引用本文复制引用
董云娜..蓝宝石晶片粗磨工艺的研究[J].金刚石与磨料磨具工程,2017,37(3):88-90,3.
