人工晶体学报2017，Vol.46Issue(6)：1122-1125,4.
化学气相沉积法制备石墨烯晶畴的氧气刻蚀现象研究
Oxidation Etching of Graphene Domains Prepared by Chemical Vapor Deposition
摘要
Abstract
Hexagonal graphene domains were synthesized on polished Cu substrate by chemical vapor deposition(CVD), and were etched with oxygen.After etching, reticular and short-line trenches were observed on the graphene domains as the result of etching on the wrinkles, and the density of trenches has great difference.The morphology and density of wrinkles were closely associated with the Cu crystal orientation indicated by the electron back-scattered diffraction.A different Cu crystal orientation led to variations in the morphology and density of wrinkles.The etching temperature has greater influence on the oxygen etching of graphene, and the etching rate increased obviously when the etching temperature exceed 250 ℃.The simple oxygen etching technology might be a convenient way to detect the distribution and morphology of wrinkles.关键词
石墨烯/化学气相沉积/褶皱/刻蚀Key words
graphene/chemical vapor deposition/wrinkle/etching分类
数理科学引用本文复制引用
王彬,李成程,孟婷婷,王桂强..化学气相沉积法制备石墨烯晶畴的氧气刻蚀现象研究[J].人工晶体学报,2017,46(6):1122-1125,4.基金项目
国家自然科学基金(21273137) （21273137）
国家级"大学生创新创业训练计划"项目(201610167080) （201610167080）
