太赫兹科学与电子信息学报2017，Vol.15Issue(3)：349-353,5.DOI:10.11805/TKYDA201703.0349
太赫兹InP HEMT器件的建模
Modeling of terahertz InP HEMT
何美林 1刘亚男 1胡志富 1崔玉兴1
作者信息
- 1. 中国电子科技集团公司第13研究所,河北石家庄 050051
- 折叠
摘要
Abstract
DC and microwave performances of InP High Electron Mobility Transistor(HEMT) can be greatly improved by decreasing the gate length(Lg), thus the device has the capability of being used in terahertz frequency. An InP HEMT is fabricated with 70nm gate length using T-gate process. DC transconductance, maximum cut-off frequency(ft) and maximum oscillating frequency(fmax) of the device are 2.87S/mm, 230GHz and 310GHz, respectively. Intrinsic S parameters are obtained after parasitic parameters extraction and de-embedding. Then small-signal model is built using the classical 9-parameter topology, and good agreement between the model and measurement is achieved, which confirms its validity. For the short channel effect, a method of regional drain current modeling is introduced, and the fitting result is quite good. Finally, the large-signal is modeled based on the capacitance model created by using Angelov model.关键词
太赫兹/磷化铟/高电子迁移率晶体管/建模Key words
terahertz/InP/High Electron Mobility Transistor/modeling分类
信息技术与安全科学引用本文复制引用
何美林,刘亚男,胡志富,崔玉兴..太赫兹InP HEMT器件的建模[J].太赫兹科学与电子信息学报,2017,15(3):349-353,5.
