太赫兹科学与电子信息学报2017，Vol.15Issue(3)：364-367,4.DOI:10.11805/TKYDA201703.0364
220 GHz新型SIW-波导过渡结构的设计
Design of new type Substrate Integrated Waveguide-to-microstrip transition structure in 220 GHz
刘军 1于伟华 1吕昕1
作者信息
- 1. 北京理工大学毫米波与太赫兹技术北京市重点实验室,北京 100081
- 折叠
摘要
Abstract
Substrate Integrated Waveguide(SIW) has been widely used in microwave circuits because it bears the advantages of both waveguide and microstrip, such as low cost, high Q, compact size, and easy for fabrication, etc. In order to measure the scattering parameters of planar SIW components and realize system integration, it is necessary to develop the transition between SIW and rectangular metallic waveguide because most of the measurement systems are waveguide based. The transition between SIW and waveguide is designed and optimized by using High Frequency Structure Simulator(HFSS). The simulation results indicate that: in 205-220 GHz, the in-band insertion loss is between 0.5-0.6 dB, and the return loss is more than 12 dB; the back to back structure has less than 1.5 dB insertion loss and the return loss is more than 10 dB, the relative bandwidth is 11.4%.关键词
太赫兹/基片集成波导/过渡结构Key words
THz/Substrate Integrated Waveguide/transition structure分类
信息技术与安全科学引用本文复制引用
刘军,于伟华,吕昕..220 GHz新型SIW-波导过渡结构的设计[J].太赫兹科学与电子信息学报,2017,15(3):364-367,4.
