半导体学报（英文版）2017，Vol.38Issue(8)：22-27,6.DOI:10.1088/1674-4926/38/8/084001
30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications
30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications
P.Murugapandiyan 1S.Ravimaran 2J.William3
作者信息
- 1. Research Scholar, Faculty of Information and Communication Engineering, Anna University, Chennai, India
- 2. Department of Electrical and Computer Science, M.A.M College of Engineering, Trichy, India
- 3. Department of Electronics and Communication Engineering, M.A.M.College of Engineering and Technology, Trichy, India
- 折叠
摘要
关键词
HEMT/back-barrier/recessed gate/cut-off frequency/regrown ohmic contact/short channel effectsKey words
HEMT/back-barrier/recessed gate/cut-off frequency/regrown ohmic contact/short channel effects引用本文复制引用
P.Murugapandiyan,S.Ravimaran,J.William..30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications[J].半导体学报（英文版）,2017,38(8):22-27,6.
