半导体学报（英文版）2017，Vol.38Issue(8)：100-104,5.DOI:10.1088/1674-4926/38/8/085009
Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell
Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell
Haisong Li 1Longsheng Wu 1Bo Yang 1Yihu Jiang1
作者信息
- 1. Xi'an Microelectronics Technology Institute, Xi'an 710054, China
- 折叠
摘要
关键词
single event effect/single event transient/radiation-hardened/guard ring, standard cell library/pulse widthKey words
single event effect/single event transient/radiation-hardened/guard ring, standard cell library/pulse width引用本文复制引用
Haisong Li,Longsheng Wu,Bo Yang,Yihu Jiang..Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell[J].半导体学报（英文版）,2017,38(8):100-104,5.
