大连工业大学学报2017，Vol.36Issue(4)：279-282,4.
FTO上溅射ITO薄膜及光电性能
Preparation of ITO thin film deposited on FTO substrate and its photoelectric properties
李亚玮 1胡志强 1徐书林1
作者信息
- 1. 大连工业大学 新能源材料研究所, 辽宁 大连 116034
- 折叠
摘要
Abstract
Transparent conductive indium tin oxide (ITO) films were prepared on the fluorine-doped tin oxide (FTO) film substrate by pulsed magnetron sputtering method.The effect of the sputtering time and the substrate temperature on the photoelectrical property of ITO film were investigated.The crystal structure and the surface shape of the film were analyzed by scanning electron microscope (SEM), and the resistance was measured by four probe.The results showed that the resistance of ITO film decreased gradually to the unchanged with increasing sputtering time and substrate temperature.Four probe measurement showed the lowest sheet resistance at 1.5 Ω for film on the FTO substrate when the substrate temperature was at 400 ℃ and the sputtering time was for 45 min.关键词
脉冲磁控溅射/透明导电薄膜/氧化铟锡薄膜Key words
pulsed magnetron sputter/transparent conductive oxide/ITO films分类
通用工业技术引用本文复制引用
李亚玮,胡志强,徐书林..FTO上溅射ITO薄膜及光电性能[J].大连工业大学学报,2017,36(4):279-282,4.
