发光学报2017，Vol.38Issue(8)：1056-1062,7.DOI:10.3788/fgxb20173808.1056
Be掺杂对InGaAsN/GaAs量子阱性能的提高
Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping
摘要
Abstract
Heavily doping beryllium in the InGaAsN/GaAs quantum well (QW) can improve the optical properties significantly, while the emission wavelength is red-shifted.The X-ray diffraction (XRD) rocking curves provide clear-cut evidence that the doping of Be suppresses the strain relaxation in InGaAsN(Be)/GaAs QW during thermal annealing.An obvious XRD rocking curve peak shift of no-Be QW diffraction towards GaAs substrate peak before and after annealing was observed, while the shift for the Be-doped QW was much smaller than undoped QW.关键词
稀氮化物/分子束外延/量子阱/应变弛豫/X射线衍射Key words
dilute nitride/molecular beam epitaxy/quantum well/strain relaxation/X-ray diffraction分类
数理科学引用本文复制引用
霍大云,石震武,徐超,邓长威,陈晨,陈林森,王文新,彭长四..Be掺杂对InGaAsN/GaAs量子阱性能的提高[J].发光学报,2017,38(8):1056-1062,7.基金项目
国家自然科学基金(11504251,51302179) （11504251,51302179）
江苏高校优势学科建设工程 （）
科技部国际合作项目(2013DFG12210) （2013DFG12210）
江苏省高校自然科学研究重大项目(12KJA140001) （12KJA140001）
江苏省普通高校研究生科研创新计划(KYLX15_1252)资助项目 Supported by National Natural Science Foundation of China (91323303, 11504251) （KYLX15_1252）
Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD) （PAPD）
International Cooperation Project by MOST (2014DFG12600) （2014DFG12600）
Natural Science Research Project of Jiangsu Higher Education (13KJA510006) （13KJA510006）
Research Plan of Graduate Students in Jiangsu Province (KYLX15_1252) （KYLX15_1252）
