发光学报2017，Vol.38Issue(8)：1069-1075,7.DOI:10.3788/fgxb20173808.1069
基于Alq3掺杂Bphen电子传输层的有机发光二极管
Organic Light Emitting Diode Based on Bphen Electron Transport Layer Doped with Alq3
摘要
Abstract
Red phosphorescent organic light emitting diodes were fabricated using R-4B phosphorescent dye.The device structure was ITO/MoO3 (30 nm)/NPB(40 nm)/TCTA (10 nm) /CBP∶R-4B(8%) (30 nm)/electron transport layer (40 nm)/LiF(1 nm)/Al(150 nm).The electron transport layers were Alq3, Bphen∶Alq3 (x%) and Bphen, respectively.The electroluminescent properties were studied by using different electron transport layers.The results show that the brightness and the current efficiency of the device using Bphen∶Alq3 (x%) as electron transport layer is 3.5 times and 1.1-2.5 times respectively stronger than that of using Alq3 or Bphen as electron transport layer.Meanwhile, the efficiency roll-off of device became smooth.Using Bphen∶Alq3 as electron transport layer can not only reduce the hopping distance when electrons transmit between LUMO levels, but also restrain the crystallization of Bphen, and as a result, the electron conductivity and efficiency roll-off of the device are improved.关键词
掺杂/电子传输层/有机发光二极管Key words
doping/electron transport layer/organic light emitting diode分类
信息技术与安全科学引用本文复制引用
袁桃利,王秀峰,牟强,张方辉,李亭亭..基于Alq3掺杂Bphen电子传输层的有机发光二极管[J].发光学报,2017,38(8):1069-1075,7.基金项目
国家自然科学基金(51272149) （51272149）
陕西省科技统筹创新工程计划(2011KTCQ01-09)资助项目 Supported by National Natural Science Foundation of China (51272149) （2011KTCQ01-09）
Shaanxi Science & Technology Co-ordination & Innovation Project (2011KTCQ01-09) （2011KTCQ01-09）
