高电压技术2017，Vol.43Issue(7)：2175-2182,8.DOI:10.13336/j.1003-6520.hve.20170628011
基于傅里叶级数的改进型IGCT物理模型
Improved IGCT Physical Model Based on Fourier Series
王佳蕊 1孔力 2屈慧 2裴玮2
作者信息
- 1. 中国科学院大学,北京100049
- 2. 中国科学院电工研究所,北京100190
- 折叠
摘要
Abstract
The research on the modeling approach of integrated gate commutated thyristor(IGCT) high precision model is beneficial to analyzing operation characteristics of IGCT and improving the overall performance of the converter.Consequently,we established an improved physical model of IGCT based on the Fourier series method.According to the operating characteristics of IGCT,the injection levels of the non-depleted N base were distinguished,then the ambipolar transport equation(ATE) of describing the carrier distribution characteristics of the region was simplified for different injection levels and solved by the Fourier series method,and the accuracy of the tail current was improved during turn-off period.Calculating the voltage drop of the space charge region of the N base through dynamic coefficient ensured that the.current was reliably turned off and the accuracy of the voltage during turn-off period was improved.Meanwhile,the quasi-static method and charge-controlled method are adopted to describe carrier distribution of N buffer layer and P base region,respectively,and the improved IGCT physical model is implemented.Moreover,the correctness of the modeling approach and the validity of the model were verified by comparing its simulation results with the existing model and experimental results.关键词
集成门极换流晶闸管/双极输运方程/注入状态/傅里叶级数法/空间电荷区压降Key words
IGCT/ambipolar transport equation/injection level/Fourier series method/voltage of space charge region引用本文复制引用
王佳蕊,孔力,屈慧,裴玮..基于傅里叶级数的改进型IGCT物理模型[J].高电压技术,2017,43(7):2175-2182,8.
