红外与毫米波学报2017，Vol.36Issue(3)：257-260,4.DOI:10.11972/j.issn.1001-9014.2017.03.001
高功率GaSb基2.6微米InGaAsSb/AlGaAsSb Ⅰ型量子阱室温工作激光器
High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type Ⅰ quantum-wells
摘要
Abstract
GaSb-based InGaAsSb/AlGaAsSb type-Ⅰ quantum-wells (QWs) laser diodes have been successfully fabricated.The wavelength is expanded to 2.6 μm with high output power.The device structures were grown by molecular beam epitaxy.Under the optimized QWs growth temperature of 500℃,the compressive strain of the QWs are defined to 1.3％ for better optical quality.With a ridge width of 100μm and cavity length of 1.5 mm,the maximum output power of single facet without coating has reached up to 328 mW under continuous wave (CW) operation at room temperature and 700 mW under pulse condition.The threshold current density is 402 A/cm2.关键词
镓锑基/半导体激光器/量子阱/中红外Key words
GaSb-based/laser diodes/quantum-wells/mid-infrared分类
数理科学引用本文复制引用
柴小力,张宇,廖永平,黄书山,杨成奥,孙姚耀,徐应强,牛智川..高功率GaSb基2.6微米InGaAsSb/AlGaAsSb Ⅰ型量子阱室温工作激光器[J].红外与毫米波学报,2017,36(3):257-260,4.基金项目
Supported by the National Basic Research Program of China (2014CB643903,2013CB932904),the National Natural Science Foundation of China (61435012,61306088,61274013) （2014CB643903,2013CB932904）
