红外与毫米波学报2017，Vol.36Issue(3)：270-275,6.DOI:10.11972/j.issn.1001-9014.2017.03.004
Te元素掺杂Bi2Se3拓扑绝缘体纳米线的反弱局域效应
Weak antilocalization effect in Tellurium-doped Bi2Se3 topological insulator nanowires
摘要
Abstract
Single-crystalline Bi2Se3 and Bi2 (TexSe1-x) 3 nanowires were synthesized via Au catalytic vapor-liquidsolid (VLS) growth method.Electronic properties of the surface states in individual Bi2 (TexSe1-x)3 (x =0.26) nanowire were studied by low-temperature magnetotransport measurement.Weak antilocalization (WAL) effect was found,suggesting strong spin-orbit coupling in our samples.It is indicated that the bulk effect can be suppressed effectively by the Tellurium (Te) doping.By fitting the magnetoconductance curves at magnetic field up to 7 T measured at different temperatures,the extracted dephasing length l(ψ) decreases from 389 nm at 1.5 K to 39 nm at 20 K,which can be well described by the power law l(ψ) ∝ T-0..It can be reasonably deduced that both the electron-electron scattering and the electron-phonon scattering play important roles in the Te-doped sample.关键词
拓扑绝缘体/Bi2Se3纳米线/反弱局域/退相干长度Key words
topological insulator/Bi2Se3 nanowires/weak antilocalization/dephasing length分类
数理科学引用本文复制引用
田锋,俞国林,周远明,张小强,魏来明,梅菲,徐进霞,蒋妍,吴麟章,康亭亭..Te元素掺杂Bi2Se3拓扑绝缘体纳米线的反弱局域效应[J].红外与毫米波学报,2017,36(3):270-275,6.基金项目
Supported by the National Natural Science Foundation of China (11304092,51371079,11305056,11304299,51602099) （11304092,51371079,11305056,11304299,51602099）
the Open Foundation of Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy (HBSKFZD2014001,HBSKFM2014006,HB-SKFM2014013,HBSKFM2014015) （HBSKFZD2014001,HBSKFM2014006,HB-SKFM2014013,HBSKFM2014015）
