红外与毫米波学报2017，Vol.36Issue(3)：280-282,288,4.DOI:10.11972/j.issn.1001-9014.2017.03.006
2微米波段低发散角瓦级GaSb基宽区量子阱激光器
Watt-class low divergence 2 μm GaSb based broad-area quantum well lasers
摘要
Abstract
GaSb based broad-area (BA) diode lasers with watt-class emission power and improved divergence were demonstrated using a fishbone shape microstructure.The influences of etching depth of microstructure on the emission and far-field performance were investigated.It was found that the utilization of microstructure was able to enhance the emission power evidently.Moreover,the deeply etched microstructure was more effective on the decrease of mode number and lateral far-field divergence.Compared with the device without microstructure,the deeply etched BA lasers show 57％ decrease in the lateral far-field angle defined by the 95％ power content,and the maximum continuous-wave (CW) output power exceeds 1.1 W.关键词
GaSb基/宽区激光器/微结构/远场发散角Key words
GaSb based/broad-area (BA) diode lasers/microstructure/lateral far-field divergence分类
信息技术与安全科学引用本文复制引用
邢恩博,王立军,戎佳敏,张宇,佟存柱,田思聪,汪丽杰,舒适立,卢泽丰,牛智川..2微米波段低发散角瓦级GaSb基宽区量子阱激光器[J].红外与毫米波学报,2017,36(3):280-282,288,4.基金项目
Supported by National Natural Science Foundation of China(61404138,61474119,61435012),the National Basic Research Program of China (2013CB64390303),Jilin Provincial Natural Science Foundation (20160101243JC and 20150520105JH),and the International Science Technology Cooperation Program of China (2013DFR00730) （61404138,61474119,61435012）
