红外与毫米波学报2017，Vol.36Issue(3)：289-294,6.DOI:10.11972/j.issn.1001-9014.2017.03.008
MMVCX光伏型HgCdTe中波探测器暗电流温度特性
Parameters extraction from the dark current characteristics of mid-wavelength HgCdTe photodiode after annealing
摘要
Abstract
In this paper,we studied the relationship between dark current and baking time of mid-wavelength HgCdTe infrared photovoltaic detector.A simultaneous-mode nonlinear fitting program for n-onp mid-wavelength HgCdTe infrared detector is reported.The curve-fitting model includes the diffusion,generation-recombination,band-to-band tunneling and trap-assisted tunneling current as dark current mechanisms.The dark current components and six characteristic parameters were obtained from the fitting of resistance-voltage(R-V) curves measured before and at different annealing time.The effects of annealing on the performance of the photodiodes were analyzed by comparing the characteristic parameters of devices at different annealing time.关键词
HgCdTe/光伏探测器/暗电流/非线性同时拟合模型/烘烤Key words
HgCdTe/photodiode/dark current/simultaneous-mode nonlinear fitting program/annealing分类
数理科学引用本文复制引用
王鹏,何家乐,许娇,吴明在,叶振华,丁瑞军,何力..MMVCX光伏型HgCdTe中波探测器暗电流温度特性[J].红外与毫米波学报,2017,36(3):289-294,6.基金项目
国家自然科学基金(11374013,51672001)Supported by the National Natural Science Foundation of China (11374013,51672001) （11374013,51672001）
