红外与毫米波学报2017，Vol.36Issue(3)：295-301,7.DOI:10.11972/j.issn.1001-9014.2017.03.009
基于栅控二极管研究碲镉汞器件表面效应
HgCdTe surface effect based on gate-controlled diode device
摘要
Abstract
CdTe/ZnS composite passivation layers were grown with different processes,and the corresponding LW HgCdTe gate-controlled diodes were fabricated.The Ⅰ-Ⅴ measurement and analysis were carried out under different conditions for these devices.The results show that the polarity of the fixed interface charge is positive and interface charge density is high for the device prepared by the standard process.The large leakage current in the surface channel is formed under high reverse bias voltage,which has an important effect on the performance of the device.The fixed interface charge density is effectively reduced by improvement of the growth process of the passivation films,which changes the HgCdTe surface from weak inversion gradually to the flat band condition.The surface effect is effectively suppressed,thus the reverse characteristics of the device can be improved significantly.In addition,the number of interface traps has been greatly reduced for the device prepared by the optimized process condition,and the stability of the device is enhanced.There is no obvious change in R0A of the device with the gate voltage.关键词
长波碲镉汞/表面钝化/栅控二极管/Ⅰ-Ⅴ/R0AKey words
LW HgCdTe/surface passivation/gate-controlled diode/Ⅰ-Ⅴ/R0A分类
数理科学引用本文复制引用
李雄军,姬荣斌,韩福忠,李东升,李立华,胡彦博,孔金丞,赵俊,朱颖峰,庄继胜..基于栅控二极管研究碲镉汞器件表面效应[J].红外与毫米波学报,2017,36(3):295-301,7.基金项目
国防973项目(613230) （613230）
云南省创新团队计划(2014HC020)Supported by National Defense 973 Project (613230) （2014HC020）
Innovative Research Team Program of Yunnan Province,China(2014HC020) （2014HC020）
