红外与毫米波学报2017，Vol.36Issue(3)：311-315,5.DOI:10.11972/j.issn.1001-9014.2017.03.011
InSb薄膜磁阻效应的厚度依赖性
Thickness-dependent magnetoresistance effects in InSb films
摘要
Abstract
We experimentally investigated the thickness-dependent magnetoresistance properties of InSb films in the temperature range of 12 ～300 K.The samples were grown on semi-insulating GaAs (100) substrates by molecular beam epitaxy (MBE).It was observed that the thick InSb only can show the semi-classical B2 dependence magnetoresistance resulted from the Lorentz deflection of carriers.At the same time,we found that weak antilocalization (WAL) effect can be much enhanced by reducing the sample's thickness (with the thickness ～ 0.1 μm).The thin sample's WAL magnetoresistance plot can be well fitted by Hikan-Larkin-Nagaoka (HLN) model,which demonstrates that the obseved WAL effect for thin InSb is with a 2-dimension character,which can be associated with the surface/interface states of InSb.关键词
锑化铟/磁阻效应/弱反局域化效应/界面/表面态Key words
InSb/magnetoresistance/weak antilocalization effect/surface/interface states分类
数理科学引用本文复制引用
张豫徽,宋志勇,陈平平,林铁,田丰,康亭亭..InSb薄膜磁阻效应的厚度依赖性[J].红外与毫米波学报,2017,36(3):311-315,5.基金项目
国家自然科学基金(11204334,61475178)Supported by the National Natural Science Foundation of China (11204334,61475178) （11204334,61475178）
