金刚石与磨料磨具工程2017，Vol.37Issue(2)：1-5,10,6.DOI:10.13394/j.cnki.jgszz.2017.2.0001
二氧化铈抛光液化学机械抛光微晶玻璃的机理及优化
Mechanism and optimization of chemical-mechanically polishing ceramic glass substrate with CeO2 slurry
摘要
Abstract
The effects of mass fraction of abrasive,pH value,flow rate of polishing slurry,rotate speed,surfaetant types and mass fraction of NH4F on the material removal rate and the surface roughness of the ceramic glass substrate were investigated by CeO2 slurry.The surface roughness of the ceramic glass substrates after being polished was characterized by atomic force microscope.Results show that the material removal rate (MRR) could reach 180.91 nm/min and the surface roughness could reach 0.72 nm under the following conditions:the mass fraction of CeO2 3％,the flow rate of slurry 25 mL/min,the rotate speed 100 r/min,pH=8.0,the mass fraction of lauryl sodium sulfate 0.01％,the mass fraction of NH4F 0.7％.关键词
二氧化铈/微晶玻璃/化学机械抛光/材料去除速率Key words
CeO2/ceramic glass/chemical mechanical polishing/material removal rate分类
矿业与冶金引用本文复制引用
白林山,王金普,储向峰..二氧化铈抛光液化学机械抛光微晶玻璃的机理及优化[J].金刚石与磨料磨具工程,2017,37(2):1-5,10,6.基金项目
国家自然科学基金项目(50975002) （50975002）
教育部高校留学回国人员科研项目. （）
