液晶与显示2017，Vol.32Issue(7)：533-537,5.DOI:10.3788/YJYXS20173210.0533
氮化硅的ECCP刻蚀特性研究
Etching characteristics of silicon nitride by ECCP
白金超 1王静 1赵磊 1张益存 1郭会斌 1曲泓铭 1宋勇志 1张亮1
作者信息
- 1. 北京京东方显示技术有限公司,北京 100176
- 折叠
摘要
Abstract
In order to optimize etching process of silicon nitride (SiNx), the enhanced capacitive coupled plasma etching (ECCP)of silicon nitride was researched.With SF6+O2 as etch gas, the effects of main parameters such as power, pressure, gas rate and He gas on etch rate and uniformity has been studied, and the mechanism of test result was analysed.The results show that power increases, etch rate increases, and compared with the source RF power, the effect of the bias RF power on the etch rate is more significant;pressure increases, the etch rate increases, but the pressure increases to a certain extent, the etch rate is basically the same, the etch uniformity becomes worse with the increase of pressure;under the condition that the total flow rate of SF6/O2 is kept constant, the proportion of O2 increases, the etch rate increases and then decreases, and the etch uniformity is gradually getting better;the addition of He can improve the etch uniformity, but when the amount of He is too much, it will cause the reduction of the etch rate.关键词
氮化硅/增强电容耦合等离子刻蚀/刻蚀速率Key words
silicon nitride/enhanced capacitive coupled plasma etching/etch rate分类
信息技术与安全科学引用本文复制引用
白金超,王静,赵磊,张益存,郭会斌,曲泓铭,宋勇志,张亮..氮化硅的ECCP刻蚀特性研究[J].液晶与显示,2017,32(7):533-537,5.
