青岛大学学报（自然科学版）2017，Vol.30Issue(2)：20-24,5.DOI:10.3969/j.issn.1006-1037.2017.05.05
Si(111)表面上Ge量子点的理论研究
Theoretical Study on Ge Quantum Dots on the Si(111) Surface
摘要
Abstract
The nanostructures with three kinds of Ge quantum dots (including the island quantum dot, strip quantum dot, and grating quantum dot) in the surface of Si(111) were optimized by the calculation method of DFTB+, the energy and optical properties of nanostructures were calculated by CASTEP.The corresponding optical properties of dielectric function, optical absorption, refractive index and reflectivity were discussed, and fond that the optical absorption of strip quantum dot is the largest among the three Ge quantum dots.关键词
Ge量子点/Si(111)表面/光吸收Key words
Ge quantum dot/Si(111) surface/Optical absorption分类
数理科学引用本文复制引用
刘晓慧,赵丽珍,吕文彩..Si(111)表面上Ge量子点的理论研究[J].青岛大学学报（自然科学版）,2017,30(2):20-24,5.基金项目
国家自然科学基金面上项目(批准号:21273122)资助. （批准号:21273122）
