人工晶体学报2017，Vol.46Issue(7)：1239-1243,5.
自发形核生长的AlN单晶湿法腐蚀研究
Research on Wet-etching of AlN Single Crystals Grown by Spontaneous Nucleation
摘要
Abstract
AlN single crystals prepared by a novel spontaneous physical vapor transport (PVT) growth approach at 2100-2250 ℃ were etched in molten KOH/NaOH eutectic alloy.All samples were investigated by scanning electron microscope (SEM) after wet-etching, optimal parameters and morphologies for c-plane, r-planes and m-plane of AlN single crystals are obtained.The growth habits and etch pit densities (EPD) of crystals grown by proposed novel spontaneous approach are also revealed.关键词
AlN单晶/自发形核/湿法腐蚀Key words
AlN single crystal/spontaneous nucleation/wet-etching分类
信息技术与安全科学引用本文复制引用
刘理想,曹凯,汪佳,任忠鸣,邓康,吴亮..自发形核生长的AlN单晶湿法腐蚀研究[J].人工晶体学报,2017,46(7):1239-1243,5.基金项目
国家自然科学基金(51401116,51404148) （51401116,51404148）
上海市科委基金(13DZ1108200,13521101102) （13DZ1108200,13521101102）
