桂林电子科技大学学报2017，Vol.37Issue(3)：173-176,4.
Ka波段低旁瓣四单元切比雪夫有源子阵的设计
Design of Ka-band low sidelobe four cell Chebyshev active subarray
摘要
Abstract
In order to reduce the sidelobes and improve the gain of subarrays,a Ka-band low sidelobe four-unit Chebyshev active subarray is designed.Simulation and optimization of passive subarray and active amplifier circuit are carried out by using electromagnetic field simulation software.The physical test results show that the active subarray S11<-10 dB in the band 28-29.5 GHz,the gain is 16.3 dB and the sidelobe level of H side is -13.4 dB.Compared with the passive subarray,the relative bandwidth of active subarray is improved by 2.4% and the gain increased by 6.3 dB.关键词
有源子阵/功率放大器/四单元子阵/高增益/小型化Key words
active subarray/power amplifier/four cell Chebyshev array antenna/high gain/miniaturization分类
信息技术与安全科学引用本文复制引用
汤佳龙,廖欣..Ka波段低旁瓣四单元切比雪夫有源子阵的设计[J].桂林电子科技大学学报,2017,37(3):173-176,4.基金项目
广西科学研究与技术开发计划(桂科AB16380316) （桂科AB16380316）
