电工技术学报2017，Vol.32Issue(16)：183-193,11.DOI:10.19595/j.cnki.1000-6753.tces.160013
基于集电极漏电流的IGBT健康状态监测方法研究
Investigation into the Health Condition Monitoring Method of IGBT Based on Collector Leakage Current
摘要
Abstract
A health condition monitoring method adopting IGBT collector leakage current is put forward to monitor the performance degradation of IGBT chip. Generation mechanism, operation rule and performance degradation mechanism of collector leakage current were analyzed in detail, based on semiconductor physics, essential structure of IGBT and device reliability physics. The variations of collector leakage current with the performance degradation grade and time were also studied. After that, combined theoretical analysis with analytical description, the health condition monitoring method of collector leakage current against the performance degradation of IGBT chip was established. The results of simulations and experiments verify the proposed method. It is important in theory and practical application for performance degradation monitoring of IGBT chip.关键词
IGBT芯片性能退化/阈值电压/集电极漏电流/健康状态监测方法Key words
Performance degradation of IGBT chip/threshold voltage/collector leakage current/health condition monitoring method分类
信息技术与安全科学引用本文复制引用
刘宾礼,肖飞,罗毅飞,汪波,熊又星..基于集电极漏电流的IGBT健康状态监测方法研究[J].电工技术学报,2017,32(16):183-193,11.基金项目
国家自然科学基金青年项目(51507185)、国家自然科学基金重点项目(51490681)和国家重点基础研究发展计划(973计划)(2015CB251004)资助. （51507185）
