发光学报2017，Vol.38Issue(6)：753-759,7.DOI:10.3788/fgxb20173806.0753
6H-SiC衬底上AlGaN基垂直结构紫外LED的制备
Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate
摘要
Abstract
Silicon-doped Al0.19Ga0.81N/Al0.37Ga0.63N DBRs were grown on n-type 6H-SiC substrates by metal organic chemical vapor deposition(MOCVD).To suppress the generation of cracks, a low-temperature AlN pre-deposition layer on 6H-SiC(0001) substrate was used as buffer.A smooth-surface 15-pair electrically conducting DBR with a reflectance of 68% at 369 nm was obtained.The stop-band bandwidth and RMS value of DBR are 10 nm and 0.4 nm, respectively.Furthermore, the vertical structure UV LEDs with and without n-DBR on 6H-SiC substrate were fabricated.By comparing EL spectra, it is shown that the introduction of DBR structure can effectively improve the UV emission.关键词
AlGaN/紫外发光二极管/分布式布拉格反射镜/金属有机物化学气相沉积/垂直结构Key words
AlGaN/ultraviolet LED/distributed Bragg reflectors/metal organic chemical vapor deposition/vertical structure分类
信息技术与安全科学引用本文复制引用
刘明哲,李鹏翀,邓高强,张源涛,张宝林..6H-SiC衬底上AlGaN基垂直结构紫外LED的制备[J].发光学报,2017,38(6):753-759,7.基金项目
国家重点研发计划(2016YFB0400103) （2016YFB0400103）
吉林省科技发展计划(20130204032GX,20150519004JH,20160101309JC) （20130204032GX,20150519004JH,20160101309JC）
教育部新世纪人才计划(NCET13-0254)资助项目 Supported by National Key R&D Projects (2016YFB0400103) （NCET13-0254）
Science and Technology Development Plan of Jilin Province (20130204032GX,20150519004JH,20160101309JC) （20130204032GX,20150519004JH,20160101309JC）
New Century Talent Program of Education Ministry (NCET13-0254) （NCET13-0254）
