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热电制冷HgCdTe中波红外探测器的研制

苏玉辉 冯江敏 赵维艳 龚晓霞 马启 邓功荣 余连杰

红外技术2017,Vol.39Issue(8):700-703,4.
红外技术2017,Vol.39Issue(8):700-703,4.

热电制冷HgCdTe中波红外探测器的研制

Thermoelectric-Cooled HgCdTe MWIR Detectors

苏玉辉 1冯江敏 1赵维艳 1龚晓霞 1马启 1邓功荣 1余连杰1

作者信息

  • 1. 昆明物理研究所,云南昆明 650223
  • 折叠

摘要

Abstract

By using bulk HgCdTe crystal materials, the detector chip preparation process including HgCdTe material splicing and polishing technology, and three-stage thermoelectric refrigeration technology, a thermoelectric-refrigerator-type 13-pixel HgCdTe photoconductive mid-wavelength infrared detector is designed and manufactured. At a temperature of-50℃, the peak voltage response can reach 2.7×104V/W, the peak detection reaches 2.3×1010cm·Hz1/2·W-1, and the response band is in the range of 3.0-4.6μm with a peak response wavelength of 4.2μm.

关键词

红外探测器/碲镉汞/热电制冷

Key words

infrared detectors/HgCdTe/thermoelectric cooled

分类

信息技术与安全科学

引用本文复制引用

苏玉辉,冯江敏,赵维艳,龚晓霞,马启,邓功荣,余连杰..热电制冷HgCdTe中波红外探测器的研制[J].红外技术,2017,39(8):700-703,4.

红外技术

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