激光技术2017，Vol.41Issue(5)：654-658,5.DOI:10.7510/jgjs.issn.1001-3806.2017.05.007
AlGaInAs/InP应变补偿多量子阱激光器
AlGaInAs/InP strain-compensated multiple quantum well laser
摘要
Abstract
In order to optimize the quantum well laser at 1.31μm wavelength in long distance optical fiber communication systems, strain compensated quantum well in active region of AlGaInAs/InP material was studied.Based on strain compensation method and Kronig-Panna model theory, the band structure of quantum well was calculated.The active region was consisted of 1.12% compressive strain AlGaInAs well layer and 0.4% tensile strain AlGaInAs barrier layer.ALDS software was used to simulate the design of the device and analyze the threshold and the steady state.The results show that the laser has a low threshold current of 9mA and a high slope efficiency of 0.4W/A at 25℃room temperature.In the potential barrier layer, the appropriate strain opposite to the strain of the potential well layer can reduce the average strain in the growth process, ensure the well growth of active zone, improve the band structure of quantum well effectively, enhance the limit ability of carriers, reduce threshold current, increase saturation power and improve device performance.关键词
激光器/量子阱结构/应变补偿/AlGaInAs/InPKey words
lasers/quantum well structure/strain compensation/AlGaInAs/InP分类
信息技术与安全科学引用本文复制引用
朱天雄,贾华宇,李灯熬,罗飚,刘应军,田彦婷..AlGaInAs/InP应变补偿多量子阱激光器[J].激光技术,2017,41(5):654-658,5.基金项目
国家八六三高技术研究发展计划资助项目(2015AA016901) （2015AA016901）
山西省自然科学基金资助项目(2015011050) （2015011050）
