发光学报2017，Vol.38Issue(9)：1205-1209,5.DOI:10.3788/fgxb20173809.1205
柔性低温多晶硅薄膜晶体管的弯曲稳定性
Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors
摘要
Abstract
The bias stability of the flexible thin-film transistors under various bending radii was investigated.The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate.The changing region of the bending radius was from 15 mm to 3 mm.For the stretch bending, the threshold voltage kept the same with the flat(Vth=-1.34 V), the mobility reduced from 45.65 cm2/(V·s) to 45.17 cm2/(V·s), and Ion/Ioff increased.For the compress bending, the transfer curve well kept the same with the flat.When the minimum bending radius was 3 mm, the device was tested under the positive and negative bias stress, and showed good stability.The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability.关键词
柔性/低温多晶硅薄膜晶体管/低温多晶硅/弯曲/稳定性Key words
flexible/thin-film transistors/LTPS-TFT/bending/stability分类
信息技术与安全科学引用本文复制引用
岳致富,吴勇,李喜峰,杨祥,姜姝,许云龙..柔性低温多晶硅薄膜晶体管的弯曲稳定性[J].发光学报,2017,38(9):1205-1209,5.基金项目
国家高技术研究发展计划(863)(2015AA033406) （863）
上海科学技术委员会项目(16JC1400602)资助Supported by National High Technology Research and Development Program(863)(2015AA033406) （16JC1400602）
Shanghai Science and Technology Commission Program(16JC1400602) （16JC1400602）
