硅酸盐学报2017，Vol.45Issue(10)：1446-1453,8.DOI:10.14062/j.issn.0454-5648.2017.10.09
四甲基硅流量对SiC空心微球成分及性能的影响
Effect of Tetramethyl Silane Flowrate on Composition and Properties of SiC Hollow Microspheres
摘要
Abstract
Silicon carbide (SiC) hollow microspheres were fabricated at different tetramethyl silane (TMS) flowratesvia chemical vapor deposition (CVD)-pyrolysis with Si(CH3)4+C4H8+H2 as a precursor gases. The chemical composition, surface morphology, surface roughness, spherical degree and wall thickness uniformity of SiC hollow microspheres were characterized. Effect of TMS flowrate on the composition and properties of the SiC hollow microspheres was investigated. The results show that C/Si atomic ratio reduces with the increase of TMS flowrate. The surface root mean square roughness (Rq) of SiC hollow microspheres firstly decreases and then increases with the increase of TMS flowrate.Rq decreases to 78nm at the TMS flowrate of 0.25mL/min. The spherical degree of SiC hollow microspheres does not change significantly with the increase of TMS flowrate. The spherical degree of all the samples is greater than 99％. The wall thickness uniformity of SiC hollow microspheres firstly increases and then decreases with the increase of TMS flow rate, and it increases to 98％ at the TMS flowrate of 0.25mL/min.关键词
碳化硅/空心微球/四甲基硅/表面粗糙度/球形度Key words
silicon carbide/hollow microsphere/tetramethyl silane/surface roughness/spherical degree分类
数理科学引用本文复制引用
唐翠兰,王涛,黄景林,何小珊,刘磊,王红斌,何智兵..四甲基硅流量对SiC空心微球成分及性能的影响[J].硅酸盐学报,2017,45(10):1446-1453,8.基金项目
中国工程物理研究院超精密加工重点实验室基金项目(ZD16002). （ZD16002）
