辽宁工程技术大学学报（自然科学版）2017，Vol.36Issue(8)：836-839,4.DOI:10.11956/j.issn.1008-0562.2017.08.010
Sb3+掺杂对Bi2Ti2O7薄膜性能的影响
Effect of Sb3+ doping on the properties of Bi2Ti2O7 thin films
摘要
Abstract
The Bi2-xSbxTi2O7 thin films with different Sb3+ content of 0.1,0.2,0.3,0.4,0.5 and 0.6 were grown on Pt/Ti/SiO2/Si substrates annealed at 700℃ for 20min by a sol-gel method.The effects of different Sb3+ content on the structure,capacitance and leakage current of Bi2Ti2O7 thin films were discussed in detail by testing the XRD,C-V curves and leakage current density of the films.Test results show that the Sb3+ doping does not change Bi2Ti2O7 thin film structure,which is still pyrochlore crystal phase;Sb3+doping improves the film capacitance value and reach at 3.8 x 10-9F for the content of Sb3+ of 0.3;Sb3+doping significantly also improves the films leakage current performance which can be as low as 1.1 x 10-10A/cm2.关键词
Sb3+掺杂/Sol-gel技术/Bi2-xSbxTi2O7薄膜/C-V曲线/J-V曲线/漏电流密度Key words
Sb3+doping/Sol-gel technology/Bi2-xSbxTi2O7 thin films/C-V curves/J-V curves/leakage current density分类
化学化工引用本文复制引用
王趱,姜伟,李三喜..Sb3+掺杂对Bi2Ti2O7薄膜性能的影响[J].辽宁工程技术大学学报（自然科学版）,2017,36(8):836-839,4.基金项目
高等院校博士学科专项科研基金(20122102110007) （20122102110007）
辽宁省自然科学基金(2013020109) （2013020109）
辽宁省大学科研创新团队项目(LT2014004) （LT2014004）
