无机材料学报2017，Vol.32Issue(8)：877-883,7.DOI:10.15541/jim20160597
Zn2+掺杂诱导Eu3+激活BiOCl层状半导体的反常发光性能研究
Anomalous Emission Performance of Eu3+-activated BiOCl Layered Phosphors Induced by Doping Zn2+
摘要
Abstract
Eu3+-activated BiOCl layered phosphors induced by doping Zn2+ were prepared by traditional solid reaction method, and the effect of Zn2+ ion dopants (0-20mol％) on the photoluminescence properties were characterized by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), Fourier transform infrared absorption (FT-IR), excitation and emission spectra, and luminescence decay curves meas-urement. It is found that increase of concentration of Zn2+ ion dopants almost has no influence on the structure of BiOCl crystals but decreases the emission intensity of Eu3+ ion at first and then increases it, accompanying with con-tinually enhancing luminescence lifetime of Eu3+ ions. The comparative experiments suggest that this results are in-volved in special layered structure of BiOCl semiconductor. Zn2+ ions would be incorporated into interlayer space of the BiOCl layered crystals when the concentration of Zn2+ ions≤10％. Then, Zn2+ ions tend to incorporate into crystal lattices by substituting Bi3+ ions. Different doping mechanism of Zn2+ may change Eu3+ lifetime and modify energy transfer efficiency from the host, leading to above emission behavior of Eu3+ ion dopants. The result is helpful to im-prove performance of novel red Eu3+ doped BiOCl phosphor and to understand emission property of rare earth ion in layered phosphors.关键词
BiOCl/Eu3+离子/Zn2+掺杂/层状半导体Key words
BiOCl/Eu3+ion/Zn2+ doped/layered semiconductor分类
化学化工引用本文复制引用
陈凡丽,李永进,张相周,徐祖元,胡锐,邱建备,杨正文,宋志国..Zn2+掺杂诱导Eu3+激活BiOCl层状半导体的反常发光性能研究[J].无机材料学报,2017,32(8):877-883,7.基金项目
国家自然科学基金(61465006) （61465006）
云南省中青年学术与技术带头人后备人才项目(2015HB013) National Natural Science Foundation of China (61465006) （2015HB013）
Reserve Talents Project of Yunnan Province (2015HB013) （2015HB013）
