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Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

Ye Wei Shengbo Sang Bing Zhou Xiao Deng Jing Chai Jianlong Ji Yang Ge Yuanliang Huo Wendong Zhang

半导体学报（英文版）2017，Vol.38Issue(9)：8-13,6.
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半导体学报（英文版）2017，Vol.38Issue(9)：8-13,6.DOI:10.1088/1674-4926/38/9/092002

Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

Ye Wei 1Shengbo Sang 1Bing Zhou 2Xiao Deng 3Jing Chai 1Jianlong Ji 1Yang Ge 1Yuanliang Huo 1Wendong Zhang1

作者信息

  • 1. Micro-Nano System Research Center, Key Laboratory of Advanced Transducers and Intelligent Control System,College of Information Engineering, Taiyuan University of Technology, Taiyuan 030024, China
  • 2. Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, China
  • 3. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China
  • 折叠

摘要

关键词

implantation/low incident energies/irradiation/molecular dynamics

Key words

implantation/low incident energies/irradiation/molecular dynamics

引用本文复制引用

Ye Wei,Shengbo Sang,Bing Zhou,Xiao Deng,Jing Chai,Jianlong Ji,Yang Ge,Yuanliang Huo,Wendong Zhang..Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study[J].半导体学报（英文版）,2017,38(9):8-13,6.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.51622507,61471255,61474079,61403273,51502193,51205273),the Natural Science Foundation of Shanxi (Nos.201601D021057,201603D421035),the Youth Foundation Project of Shanxi Province (Nos.2015021097),the Doctoral Fund of MOE of China (No.20131402110013),the National High Technology Research and Development Program of China (No.2015AA042601),and the Specialized Project in Public Welfare from The Ministry of Water Resources of China (Nos.1261530110110). （Nos.51622507,61471255,61474079,61403273,51502193,51205273）

半导体学报（英文版）

OACSCDCSTPCD

1674-4926

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