电气传动2017，Vol.47Issue(9)：59-63,5.DOI:10.19457/j.1001-2095.20170912
SiC MOSFET驱动电路设计与实验分析
Design and Experiment Analysis of Driver Circuit for SiC MOSFET
邹世凯 1胡冬青 1黄仁发 1崔志行 1梁永生1
作者信息
- 1. 北京工业大学电子信息与控制工程学院,北京 100124
- 折叠
摘要
Abstract
A driver circuit of SiC MOSFETs with simple structure,high computing speed,and high output power was proposed to make devices more reliable in the application,based on analyzing their switching characteristics. In addition,the overload protection circuit of devices at high frequency and high power using the Pspice was investigated, indicating that it is good at protecting devices from damage. Furthermore ,a double pulse test platform was set up to verify the driver circuit,certifying its effectiveness. In particular,the influence of the gate resistance on SiC MOSFETs′switching characteristics was demonstrated. The experimental results show that the driver circuit has a good driver ability.关键词
碳化硅MOSFET/驱动电路/过载保护电路/Pspice仿真软件/双脉冲实验Key words
SiC metal-oxide-semiconductor field-effect transistor/driver circuit/overload protection circuit/Pspice simulation software/double pulse test分类
信息技术与安全科学引用本文复制引用
邹世凯,胡冬青,黄仁发,崔志行,梁永生..SiC MOSFET驱动电路设计与实验分析[J].电气传动,2017,47(9):59-63,5.
