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绝缘衬底上化学气相沉积法生长石墨烯材料

刘庆彬 蔚翠 何泽召 王晶晶 周闯杰 郭建超 冯志红

化工学报Issue(z1):276-281,6.
化工学报Issue(z1):276-281,6.DOI:10.11949/j.issn.0438-1157.20170348

绝缘衬底上化学气相沉积法生长石墨烯材料

Epitaxial graphene on insulating substrates by chemical vapor deposition

刘庆彬 1蔚翠 1何泽召 1王晶晶 1周闯杰 1郭建超 1冯志红1

作者信息

  • 1. 河北半导体研究所专用集成电路国家级重点实验室,河北 石家庄 050051
  • 折叠

摘要

Abstract

Since graphene was made by mechanical exfoliation in 2004,it has attracted great interest due to its unique properties.The growth of graphene directly on insulating substrates without catalyst has emerged as a trend for chemical vapor deposition (CVD)-graphene.This growth method offers an advantage in avoiding the post-growth transfer process.So far,many insulating substrates have been used for graphene growth by CVD,such as Si,sapphire,SiC,and other substrates.In this work,Si,sapphire and SiC substrate were chosen for graphene growth.The surface morphology,defects,crystal quality and electronics characteristic of the samples were characterized by atomic force microscopy (AFM),optic microscopy (OM),Raman spectroscopy,and Hall system.AFM and Raman results showed that 3C-SiC layer could be controlled by Si3N4 covered on Si substrate,and 2D-FWHM of material on Si substrate was between 70 cm-1 and 90 cm-1,that crystal quality was not as good as material by traditional method.Graphene was grown on a 5.08 cm sapphire substrate,the material surface morphology appeared more flat under the lower growth temperature,while the crystal quality was better under the higher temperature.The carrier mobility is above 1000 cm2·V-1·s-1 at room temperature.Compared to epitaxial graphene by Si sublimation,CVD-grown graphene on SiC substrate has a more flat surface morphology,lower defect,better crystal quality,and higher carrier mobility.The highest carrier mobility of CVD-grown graphene on SiC substrate is 4900 cm2·V-1·s-1 at room temperature.

关键词

石墨烯/绝缘衬底/化学气相沉积/表面/形态学/电学特性

Key words

graphene/insulating substrates/chemical vapor deposition/surface/morphology/electronics characteristic

分类

数理科学

引用本文复制引用

刘庆彬,蔚翠,何泽召,王晶晶,周闯杰,郭建超,冯志红..绝缘衬底上化学气相沉积法生长石墨烯材料[J].化工学报,2017,(z1):276-281,6.

基金项目

国家自然科学基金项目(61306006,61674131).supported by the National Natural Science Foundation of China (61306006,61674131). (61306006,61674131)

化工学报

OA北大核心CSCDCSTPCD

0438-1157

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