传感技术学报2017，Vol.30Issue(5)：674-677,4.DOI:10.3969/j.issn.1004-1699.2017.05.007
基于BiCMOS工艺可修调的高精度低温度系数带隙基准源设计
Design of High Precision Low Temperature Coefficient Bandgap Reference with Trimming Based on BiCMOS Process
摘要
Abstract
A high precision low temperature coefficient bandgap reference is designed. The bandgap reference source corrects the non-linear temperature characteristic of the bandgap reference circuit of the first-order temperature coefficient by using the ratio of the resistance,so that the accuracy and the temperature coefficient of the reference voltage are greatly improved. The trimming circuit is also used to improve the output accuracy of the reference voltage. 0.8 μm BiCMOS( Bipolar-CMOS) process was used to fabricate the wafers. The bandgap reference circuit occupied 0.04 mm2. The results show that the temperature coefficient of the reference voltage is 1.2×10-5/℃ and the temperature coefficient of the reference current is 3.77×10-4/℃ in the temperature range of -40 ℃～125 ℃under the 5 V power supply voltage. When the power supply voltage changes between 4.0 V～7.0 V,the variation of the reference voltage is 0. 4 mV and power supply regulation rate is 0. 13 mV/V, the variation of the reference current is about 0.02 μA and power supply regulation rate is 6.7 nA/V.关键词
温度传感器芯片/带隙基准/温度系数/电源调整率Key words
temperature sensor chip/bandgap reference/temperature coefficient/power supply regulation分类
信息技术与安全科学引用本文复制引用
王文建..基于BiCMOS工艺可修调的高精度低温度系数带隙基准源设计[J].传感技术学报,2017,30(5):674-677,4.基金项目
浙江省科技厅公益技术应用研究计划项目( 2017C31077) （ 2017C31077）
