红外与毫米波学报2017，Vol.36Issue(4)：415-419,5.DOI:10.11972/j.issn.1001-9014.2017.04.007
MgxNi1-xMn2O4薄膜结构与电学特性研究
Study on the structural and electrical properties of MgxNi1-xMn2O4 thin films
摘要
Abstract
The MgxNi1-xMn2O4 (MNM x =0,0.05,0.10,0.15,0.20) films were grown on Al2O3 substrate by chemical solution deposition method.The effect of Mg doping on the structural properties of MNM thin films was studied by x-ray diffractomer and field emission scanning electron microscopy.The results show that the MNM films have a single cubic spinel structure and the films are smooth and uniform,which have good crystallinity.The electrical measurements show that the conduction of MNM thin films can be described by a variable range hopping model.The values of resistivity,characteristic temperature T0,temperature coefficient of resistance α for MNM thin films were obtained.The Mg concentration dependence of structural and electrical properties for MNM films was investigated.关键词
镁掺杂/尖晶石氧化物/负温度系数Key words
Mg doping/spinel oxide/negative temperature coefficient of resistance分类
信息技术与安全科学引用本文复制引用
张增辉,刘芳,侯云,第文琦..MgxNi1-xMn2O4薄膜结构与电学特性研究[J].红外与毫米波学报,2017,36(4):415-419,5.基金项目
国家自然科学基金(61275111),上海市自然科学基金(15ZR1445700) （61275111）
Supported by National Natural Science Foundation of China(61275111),and Natural Science Foundation of Shanghai (15ZR1445700) （61275111）
