红外与毫米波学报2017，Vol.36Issue(4)：420-424,5.DOI:10.11972/j.issn.1001-9014.2017.04.008
InGaAs/InP单光子雪崩光电二极管InP顶层掺杂研究
InP cap layer doping density in InGaAs/InP single-photon avalanche diode
摘要
Abstract
The influence of the InP cap layer doping density of InGaAs/InP SPAD was studied through theoretical calculation and comparative experiment.Theoretical results show that low cap layer doping density is beneficial to suppress premature edge breakdown,reduce tunneling cartier generation rate,and increase breakdown probability.Experimental results show that devices with unintentionally doped cap layer have achieved 20％ single photon detection efficiency and 1 kHz dark count rate at 223 K.Compared with devices with cap layer doping density of 5 × 1015/cm3,the single photon detection efficiency increases by 3 ％ ～ 8 ％,and the dark count rate decreases by about an order of magnitude.It is demonstrated that reducing the cap layer doping density is beneficial to improve the performance of InGaAs/InP SPAD.关键词
InGaAs/InP/单光子雪崩光电二极管/顶层/掺杂浓度Key words
InGaAs/InP/single-photon avalanche diode/cap layer/doping density分类
数理科学引用本文复制引用
李彬,陈伟,黄晓峰,迟殿鑫,姚科明,王玺,柴松刚,高新江..InGaAs/InP单光子雪崩光电二极管InP顶层掺杂研究[J].红外与毫米波学报,2017,36(4):420-424,5.基金项目
中国电子科技集团创新基金项目(KJ1402011) （KJ1402011）
Supported by China Electronic Technology Group Innovation Fund Project(KJ1402011) （KJ1402011）
