物理化学学报2017，Vol.33Issue(8)：1514-1519,6.DOI:10.3866/PKU.WHXB201705123
单层MoS2(1-x)Se2x合金材料中硒原子的晶界择优掺杂和富集
Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS2(1-x)Se2x Alloy
摘要
Abstract
We report a microscopic study on the process for the substitution of selenium into monolayer molybdenum disulfide via a joint CVD-STEM characterization.Results from quantitative and statistic STEM reveal that the concentration of Se atoms in grain boundaries is much higher than that in intra-domains of monolayer MoS2(1-x)Se2x alloy.In-depth analysis finds that Se atoms are enriched in the distorted regions due to presence of dislocation cores on the grain boundary,which can be further understood by considering the difference of chemical reactivity for doping reaction in different types of grain boundaries with different symmetry and different misorientation angles.Our results pave the way towards the controlled growth of alloyed two-dimensional transition metal dichalcogenide materials with a high precision,and their further applications.关键词
MoS2(1-x)Se2x合金/晶界富集/原子分辨扫描透射电子显微镜Key words
MoS2(1-x)Se2x alloy/Grain boundary enrichment/Atomic-resolution scanning transmission electron microscopy分类
化学化工引用本文复制引用
吕丹辉,朱丹诚,金传洪..单层MoS2(1-x)Se2x合金材料中硒原子的晶界择优掺杂和富集[J].物理化学学报,2017,33(8):1514-1519,6.基金项目
The project was supported by the National Natural Science Foundation of China (51472215,51222202) （51472215,51222202）
国家自然科学基金(51472215,51222202)资助项目 （51472215,51222202）
