真空电子技术Issue(5)：16-19,71,5.
高导热氮化硅陶瓷的低温烧结和性能研究
Study on Low Temperature Sintering and Properties of High Thermal Conductivity Silicon Nitride Ceramics
摘要
Abstract
In this study,Si3N4 circuit substrates were prepared through tape casting,nitridation and pressureless sintering using ternary ZrO2-Y2O3-MgO as sintering additive.The influence of ZrO2 addition on sintering behavior and densification of Si3N4 was studied.The results showed that the introduction of ZrO2 can effectively lower the sintering temperature and realize the densification by pressureless sintering at 1800℃.Si3N4 ceramics with the relative density of 99％ and the thermal conductivity of 72 W/m · K can be obtained after sintering.关键词
氮化硅基片/流延成型/硅粉氮化/无压烧结Key words
Silicon nitride circuit substrate/Tape casting/Nitridation/Pressureless sintering分类
化学化工引用本文复制引用
张景贤,段于森,江东亮,陈忠明,刘学建,黄政仁,杨建,李晓云,丘泰..高导热氮化硅陶瓷的低温烧结和性能研究[J].真空电子技术,2017,(5):16-19,71,5.基金项目
国家自然科学基金项目(51572277) （51572277）
科技部重点研发计划(2016YFB0700305) （2016YFB0700305）
上海市科学技术委员会(17YF1428800、17ZR1434800)和中国科学院上海硅酸盐研究所高性能陶瓷与超微结构国家重点实验室的支持国家自然科学基金面上项目(51572277,51302288). （17YF1428800、17ZR1434800）
