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大功率IGBT模块用氮化铝DBC基板技术研究

张振文 崔嵩 詹俊 许海仙

真空电子技术Issue(5):33-38,6.
真空电子技术Issue(5):33-38,6.

大功率IGBT模块用氮化铝DBC基板技术研究

Technical Study of AlN DBC Substrate Applied in High-Power IGBT Module

张振文 1崔嵩 1詹俊 1许海仙1

作者信息

  • 1. 中国电子科技集团公司第四十三研究所,安徽合肥
  • 折叠

摘要

Abstract

With the power increase of IGBT/HVIGBT,higher thermal conductivity is required for directly-attached DBC substrate.Based on the facts that normal alumina DBC cannot meet this requirement and the application of BeO is restricted by its toxicity in producing process,AlN DBC substrate has become the better choice for new generation substrate for its good performance in environmental protection,efficiency and heat dissipation.In the production process of AlN DBC,the main problem need to solve is the inefficient AlN wetting with copper oxide,and the voids in the bonding surface of copper and ALN seriously influence the reliability of DBC substrate.In this paper,the production plan of high reliable AlN DBC substrate is illustrated:the AlN ceramics is first pretreated by special chemicals,and then is processed by high temperature oxidation technique.As a result,a compact and uniform oxidized transition layer is formed.High quality oxidized transition layer has good wetting property with copper oxide,which is the precondition for the manufacturing of high reliable AlN DBC substrate.Through the optimization of holding temperature,holding time and oxygen concentration to control the thickness of oxidized layer,AlN DBC substrate with high peeling strength and low voids rate is produced.

关键词

氮化铝DBC/过渡层/剥离强度/孔洞

Key words

AlN DBC/Transition layer/Peeling strength/Voids

分类

信息技术与安全科学

引用本文复制引用

张振文,崔嵩,詹俊,许海仙..大功率IGBT模块用氮化铝DBC基板技术研究[J].真空电子技术,2017,(5):33-38,6.

真空电子技术

1002-8935

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