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Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

Lixia Li Dong Pan Xuezhe Yu Hyok So Jianhua Zhao

半导体学报（英文版）2017，Vol.38Issue(10)：39-45,7.

半导体学报（英文版）2017，Vol.38Issue(10)：39-45,7.DOI:10.1088/1674-4926/38/10/103001

Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

Lixia Li ¹Dong Pan ²Xuezhe Yu ¹Hyok So ²Jianhua Zhao¹

作者信息

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049,China
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摘要

关键词

GaAs/nanowire/molecular-beam epitaxy

Key words

GaAs/nanowire/molecular-beam epitaxy

引用本文复制引用

Lixia Li,Dong Pan,Xuezhe Yu,Hyok So,Jianhua Zhao..Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy[J].半导体学报（英文版）,2017,38(10):39-45,7.

基金项目

Project supported partly by the MOST of China (No.2015CB921503),the National Natural Science Foundation of China (Nos.61504133,61334006,61404127),and Youth Innovation Promotion Association,CAS (No.2017156). （No.2015CB921503）

半导体学报（英文版）

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ISSN：1674-4926

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