Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxyOACSCDCSTPCD
Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy
Lixia Li;Dong Pan;Xuezhe Yu;Hyok So;Jianhua Zhao
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049,ChinaState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049,ChinaState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
GaAsnanowiremolecular-beam epitaxy
GaAsnanowiremolecular-beam epitaxy
《半导体学报（英文版）》 2017 (10)
39-45,7
Project supported partly by the MOST of China (No.2015CB921503),the National Natural Science Foundation of China (Nos.61504133,61334006,61404127),and Youth Innovation Promotion Association,CAS (No.2017156).
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