中国电机工程学报2017，Vol.37Issue(18)：5420-5426,7.DOI:10.13334/j.0258-8013.pcsee.161880
IGCT驱动关断电路及续流回路参数提取
Parameter Extraction of Driving Shutdown Circuits and Freewheeling Circuits of IGCT
王佳蕊 1孔力 1周亚星 1李鲁阳 1祁晓敏1
作者信息
- 1. 中国科学院电工研究所,北京市海淀区100190
- 折叠
摘要
Abstract
The current of the integrated gate commutated thyristor (IGCT) is quickly reversed from the cathode to the gate during the IGCT turn-off period,while the anti-paralleled diode is turned on due to the forward bias voltage,therefore th e turn-off transient characteristics of the IGCT are influenced by the shutdown circuit of the gate driver and the operating characteristics of the anti-paralleled diode.Based on the commutation mechanism during the IGCT turn-off period and the working principle of the anti-paralleled diode,the equivalent circuits of the freewheeling circuit composed of the gate commutated thyristor (GCT),the driver circuit and the anti-paralleled diode during the turn-off period were proposed,and the transformations of the structure and operating characteristics of equivalent circuits were detailed analyzed under different conditions of the anti-paralleled diode.A parameter extraction method of the shutdown circuit of gate driver and the freewheeling circuit was obtained by combining the experimental results of the terminal voltage of IGCT and all branch currents of the equivalent circuit during the IGCT turn-off period.Through the comparison of theoretical analysis and experimental results of different clamping voltages and turn-off currents,and considering the consistency of parameter extraction results,the validities of equivalent circuits,theoretical analysis and the parameter extraction method were well-proven.关键词
集成门极换流晶闸管/门极驱动关断电路/反并联二极管/等效电路/参数提取Key words
integrated gate commutated thyristor (IGCT)/shutdown circuit of gate driver/anti-paralleled diode/equivalent circuit/parameter extraction分类
信息技术与安全科学引用本文复制引用
王佳蕊,孔力,周亚星,李鲁阳,祁晓敏..IGCT驱动关断电路及续流回路参数提取[J].中国电机工程学报,2017,37(18):5420-5426,7.
