中南大学学报（自然科学版）2017，Vol.48Issue(9)：2396-2401,6.DOI:10.11817/j.issn.1672-7207.2017.09.019
可防误翻转高精度欠压锁存电路设计
Design of high precision undervoltage lockout circuit with function of anti-error flip
摘要
Abstract
Based on the analysis of the traditional under voltage lockout theory, a high precision undervoltage lockout circuit with the function of preventing error flip was designed using the VIS 0.4 μm BCD process. The circuit was made up by three parts with the core of the bandgap comparator. The anti-error flip circuit with the hysteresis characteristics was designed to ensure that the UVLO circuit could output the safety signal. To guarantee the precise UVLO the temperature characteristic of the bandgap circuit was adjusted. At last, the output goes through the amplifier circuit to output the stable UVLO signal. The whole circuit was simulated in the Cadence software. The results show that the maximum threshold voltage distortion is only 100 mV and the threshold resolution ratio is 10-5V at -40-125 ℃. Working in the voltage from 3 V to 5 V, the turn-on threshold of anti-error flip circuit is 2.95 V. It could keep the whole circuit in safe. The circuit design and simulation results can help power supply chip late development.关键词
欠压锁存/防误翻转/带隙比较器/高精度/BCD工艺Key words
under voltage lockout/prevent error reversal/bandgap comparator/high precision/BCD process分类
信息技术与安全科学引用本文复制引用
田磊,姜振益..可防误翻转高精度欠压锁存电路设计[J].中南大学学报（自然科学版）,2017,48(9):2396-2401,6.基金项目
陕西省教育厅专项科研计划项目(15JK1676) （15JK1676）
西安市社会科学规划基金重点资助项目(2015EA03) （2015EA03）
西安邮电大学青年教师基金重点资助项目(101-0488) (Project(15JK1676) supported by the Shaanxi Provincial Department of Education Scientific Research of China （101-0488）
Project(21015EA03) supported by Key Project of Social Science Planning of Xi'an City （21015EA03）
Project(101-0488) supported by the Youth Founded Project of Xi'an University of Posts and Telecommunications) （101-0488）
