材料科学与工程学报2017，Vol.35Issue(4)：524-527,533,5.DOI:10.14136/j.cnki.issn 1673-2812.2017.04.002
氩等离子体处理增强TiO2∶Er/p+-Si异质结器件的电致发光
Ar Plasma Treatment Enhancing EL from the TiO2 ∶Er/p+-Si Heterostructured Device
摘要
Abstract
In our previous work[1],the electroluminescence (EL) from the Er-doped TiO2 (TiO2 ∶ Er) film on heavily boron-doped silicon (p+-Si) thus forming the TiO2 ∶ Er/p+-Si heterostructured device.In this work,the effect of argon (Ar) plasma treatment of TiO2 ∶ Er film on the EL from the TiO2 ∶ Er/p+-Si heterostructured device.It is found that such Ar plasma treatment enhances not only the Er-related visible and near-infrared EL but also the oxygen-vacancy-related EL from the TiO2 host.The oxygen vacancy concentration in the TiO2 ∶ Er film is remarkably increased by the Ar plasma treatment,which enhances the oxygen-vacancy-related EL and,moreover,facilitates the energy transfer from the TiO2 host to the Er3+ ions via the oxygen vacancies that act as the sensitizers,thus leading to the enhanced Er-related EL.关键词
电致发光/硅基器件/TiO2∶Er薄膜/Ar等离子体处理Key words
electroluminescent/silicon based devices/TiO2/Er film/Ar plasma treatment分类
数理科学引用本文复制引用
高志飞,朱辰,马向阳,杨德仁..氩等离子体处理增强TiO2∶Er/p+-Si异质结器件的电致发光[J].材料科学与工程学报,2017,35(4):524-527,533,5.基金项目
国家自然科学基金资助项目(51372219) （51372219）
“973”资助项目(2013CB632102) （2013CB632102）
教育部创新团队计划资助项目(IRT13R54) （IRT13R54）
