电工技术学报2017，Vol.32Issue(20)：117-123,132,8.DOI:10.19595/j.cnki.1000-6753.tces.160596
基于键合线等效电阻的IGBT模块老化失效研究
Study of IGBT Module Aging Failure Base on Bond Wire Equivalent Resistance
摘要
Abstract
Literature about the reliability of insulated gate bipolar transistor (IGBT) revealed that bond wire lift-off failure is one of the most dominant factors affecting the reliability of IGBT. This paper proposed a condition monitoring method of IGBT module based on bond-wire equivalent resistanceRJ. The theoretical analysis about the relationship between equivalent resistance of bond-wires and turn-off transient-waveform of IGBT was developed at first; and then the equation calculating equivalent resistance was established; finally, the relationship between bond-wire equivalent resistance and lift-off bond wires was analyzed qualitatively and quantitatively through experiments. It is concluded that bond-wire equivalent resistance RJ will increase with the increase of bond-wires lift-off, which validates the feasibility and correctness of the proposed method.关键词
绝缘栅双极型晶体管/键合线/等效电阻/老化/可靠性Key words
Insulated gate bipolar transistor (IGBT)/bond-wire/equivalent resistance/aging/reliability分类
信息技术与安全科学引用本文复制引用
彭英舟,周雒维,张晏铭,孙鹏菊,杜雄..基于键合线等效电阻的IGBT模块老化失效研究[J].电工技术学报,2017,32(20):117-123,132,8.基金项目
国家自然科学基金重点项目(51137006)和国家自然科学基金项目(51577020)资助. （51137006）
