人工晶体学报2017，Vol.46Issue(9)：1683-1690,8.
β-Ga2O3薄膜掺杂工艺及性能研究进展
Research Progress on Doping Process and Properties of β-Ga2 O3 Thin Film
摘要
Abstract
β-Ga2 O3 thin film has been considered as one of the most promising materials in the field of photoelectric detector and light emitting devices because of its wide band gap , high stability and low production cost .However , the low conductivity of β-Ga2 O3 has limited its application in some fields . And improving the optical and electrical properties of β-Ga2 O3 thin films by doping method has attracted many researchers'attention.This paper introduces several common doping methods and the effect of doping on the structure and photoelectric properties of β-Ga2 O3 thin film, and the future research work is also prospected .关键词
β-Ga2O3/薄膜/掺杂Key words
β-Ga2 O3/thin film/doping分类
信息技术与安全科学引用本文复制引用
张浩,邓金祥,白志英,潘志伟,孔乐..β-Ga2O3薄膜掺杂工艺及性能研究进展[J].人工晶体学报,2017,46(9):1683-1690,8.基金项目
国家自然科学基金(60876006,60376007) （60876006,60376007）
北京市教育委员会科技计划重点资助项目(KZ201410005008) （KZ201410005008）
