天津工业大学学报2017，Vol.36Issue(5)：68-73,6.DOI:10.3969/j.issn.1671-024x.2017.05.014
基于RTP热处理的Bi/Te多层膜的热电性能
Thermoelectricity of Bi/Te multilayer thin films based on RTP annealing process
摘要
Abstract
In order to improve the performance of thermoelectric thin film material,the multi-layer Bi/Te film was prepared through the magnetron sputtering and the rapid thermal process in atmospheric temperature and expected to ob-tain the higher thermal parameters in a relatively short time.The results show that the maximum values of See-beck coefficient and power factor are positively related with annealing temperature.Annealing 2-11 min at 400℃,the maximum value of Seebeck coefficient is-190.41 μV/K,maximum power factor is 8.28 μW·K-2·m-1. With the increase of annealing temperature,the oscillation amplitude of the Seebeck coefficient,carrier concen-tration,carrier mobility and the conductivity and power factor increase.The carrier concentration is inversely pro-portional to the Seebeck coefficient and is proportional to the conductivity.It illustrates that by changing the ma-terial structure and rapidly annealing at high temperature the higher thermoelectric parameters can be obtained, at the same time ensure the integrity of the film.关键词
Bi/Te多层薄膜/Seebeck系数/RTP/磁控溅射Key words
Bi/Te multilayer thin film/Seebeck coefficient/rapid thermal annealing process(RTP)/magnetron sputtering分类
信息技术与安全科学引用本文复制引用
付贤松,孙伟,张建新,马楷,李海林..基于RTP热处理的Bi/Te多层膜的热电性能[J].天津工业大学学报,2017,36(5):68-73,6.基金项目
国家自然科学基金资助项目(11404239) （11404239）
天津市自然科学基金资助项目(15JCQNJC41800) （15JCQNJC41800）
